Characterization of metal-gate FinFET variability based on measurements and compact model analyses

A FinFET compact model, which provides physical representation of measurement data, was developed and was successfully applied to the characterization of sate-of-the-art metal-gate (MG) FinFETs. By combining the transistor size measurement and the model parameter calibration, the V
th
variation of the MG FinFETs was analyzed into structure-based (T
Si
, L
G
) and material-based (gate work-function) variations for the first time. In addition, the extracted variations were incorporated into the compact model, and FinFET SRAM variability for hp-32-nm node was predicted.