Comprehensive performance assessment of scaled (110) CMOSFETs based on understanding of STI stress effects and velocity saturation

We present the systematic study on dominant factors of the performance of scaled (110) n/pFETs. STI stress effects and velocity saturation phenomena in narrow and short (110) devices are investigated for the first time. I
_dsat
of scaled (110) nFETs approaches (100) nFETs as a result of mu increase due to transverse compressive stress from STI in (110) nFETs and strong velocity saturation in (100) nFETs. Meanwhile, I
_dsat
of scaled (110) pFETs are still superior to (100) pFETs due to high mu of (110) pFETs and weaker velocity saturation than nFETs as long as R
_sd
of (110) pFETs is well suppressed. As a result, scaled (110) CMOS shows excellent performance even without intentional stressors.