Fluorinated HfO2 gate dielectrics engineering for CMOS by pre- and post-CF4 plasma passivation

In this paper, we demonstrate TaN/fluorinated HfO
₂
CMOS devices, focusing on symmetry and asymmetry fluorine incorporation at top or bottom HfO
₂
interfaces. 16% permittivity enhancement, 65% and 91% mobility increases for electron and hole, respectively, under high electric field was achieved. Reliability of n- and p-MOSFET was improved 3 orders and 8% for GIDL and hot carrier immunity, respectively. A physical model of shallow and deep trapping level affected by fluorine was proposed to explain the NBTI and PBTI improvements.