Localized ultra-thin GeOI: An innovative approach to germanium channel MOSFETs on bulk Si substrates

In this paper we compare two innovative approaches to the integration of Ge-channel on Insulator MOSFETs from conventional Bulk-Si substrates. The first one is based on the Ge-condensation process, and the second one relies on the epitaxy of a pure ultra-thin 2.3 nm-thick Ge layer performed directly on Si. With the second approach, we demonstrate for the first time highly-performant Localized GeOI pMOS devices down to 75 nm gate length, with controlled threshold voltage and drive current up to 600 muA/m@-1.1 V. We show a +35% improvement in drive current compared to Si references for the same Gate overdrive.