High-performance surface channel In-rich In0.75Ga0.25As MOSFETs with ALD high-k as gate dielectric

High-performance inversion-type enhancement-mode n-channel MOSFETs on In-rich In
_0.75
Ga
_0.25
As using ALD Al
₂
O
₃
as high-k gate dielectrics are demonstrated. The maximum drain current, peak transconductance, and the effective electron velocity of 1.0 A/mm, 0.43 S/mm and 1.0times10
⁷
cm/s at drain voltage of 2.0 V are achieved at 0.75-mum gate length devices. The device performance of In-rich InGaAs NMOSFETs with different indium contents, In
_0.53
Ga
_0.47
As, In
_0.65
Ga
_0.35
As and In
_0.75
Ga
_0.25
As, are systematically studied.