A unified 7.5nm dash-type confined cell for high performance PRAM device

We present a new-type confine structure within 7.5nm width dash-contact for sub 20nm generation PRAMs. Phase Change Material (PCM) by Chemical Vapor Deposition (CVD) was perfectly filled in a 7.5nm width dash-contact without void along with 30nm depth. By adopting confined CVD-PCM, we were able to reduce the reset current below ∼160µA and to obtain high reliability. In addition, the programming time of dash-confined cell was much improved to 50 ns due to volume confinement of PCM cell. Consequently, we firstly demonstrate the high performance of the 7.5nm width confined cell, which is the smallest size close to physical limit.