Feedback FET: A novel transistor exhibiting steep switching behavior at low bias voltages

A novel transistor design which utilizes positive feedback to achieve steep switching behavior is proposed and demonstrated. The feedback (FB) FET exhibits very low subthreshold swing (~2 mV/dec) and high I
ON
/I
OFF
ratio (~10
⁸
) to allow for significant reductions in gate voltage swing (to below 0.5V). It is a new candidate to replace the MOSFET for future low-power electronic devices.