Rugged Dotted-channel LDMOS structure

This paper presents the extremely robust and innovative dotted-channel structure which utilizes a unique approach of suppressing the parasitic bipolar to significantly improve the SOA and push the boundaries of LDMOS operation to a new realm. The structure has body contact placed through the poly-silicon gate of the standard MOSFET resulting in a hole (h+) collection site in front of the source which in turn shunts the base emitter path of the parasitic bipolar.