Advanced On-The-Fly Method with Correction of Initial Values to Characterize Negative Bias Temperature Instability Reliability

This paper presents a new on-the-fly (OTF) method in order to evaluate the effective threshold voltage (V
_T
) shift without relaxation effects during negative bias temperature instability (NBTI) stresses on pMOSFETs. This method, called OTF_CIV, for on-the-fly with correction of initial values, allows us also to estimate the initial current at stress voltage, which is impossible to measure with an Agilent 4156 parameter analyzer due to the minimum measurement time.