Epitaxial growth of high quality InSb1-xNx by MOCVD

InSb
_1-x
N
_x
was grown epitaxially on InSb (100) by metal-organic chemical vapor deposition. The XRD measurement showed that the full width at half maximum (FWHM) of the sample is as low as 0.04, which indicates that the film behaves very high quality. Besides, lattice mismatch between InSb
_1-x
N
_x
layer and InSb substrate was also detected from the XRD results, indicating that the nitrogen has been successfully incorporated into InSb. According to this mismatch, we have calculated the N content in the layer. The sample band-gap was measured by Infrared transmission. Besides, XPS was also done to measure the N content in the InSb
_1-x
N
_x
and a relatively weak N peak was detected in the results.