Design of flat-band AlGaAs heterojunction Bragg reflectors

Bragg reflectors using periodic AlGaAs heterojunction layers can be built into a light emitting diode to reduce the absorption in the substrate, or into a laser diode to form a cavity. In this paper, a numerical model for the design of low resistance flat-band p-type or n-type graded heterojunction reflectors is presented. It computes the required doping profile to achieve a flat conduction band or valence band across a graded junction, such that the reflector will add minimum series resistance to the devices.