Effect of sulfur treatment on the γ-ray detection quality of Al/CdTe/Pt Schottky diode

We have studied the effects of sulfur treatment on the performance of an Al/CdTe/Pt Schottky diode. The CdTe(111)Te surface was treated by (NH
4
)
2
S
x
solution before deposition of Al Schottky electrode. The Te-rich layer on the CdTe surface was removed and the CdS thin layer was grown by sulfur treatment. After 2 min sulfur treatment, the leakage current at 600 V applied voltage of Al/CdTe/Pt Schottky diode was remarkably decreased than non-treated sample. Also, the polarization phenomenon was drastically suppressed by sulfur treatment. After 20 hours from the start of the γ-ray detection, FWHM of 59.5 keV showed less than 2.0 keV.