Design of 0.18um high voltage LDMOS for automotive application

Designing of high voltage LDMOS with a reduced surface field (RESURF) structure have been investigated to achieve the optimum figure of merit, maximum breakdown voltage accompanied with low on resistance. The drift region profile and device geometry plays important role to achieve target breakdown voltage of 80V. The electrical behaviors of the designed high voltage LDMOS for both on state and off state conditions are discussed analytically in this paper.