Circuit-Level Implementation of Semiconductor Self-Assembled Quantum Dot Laser

In this paper, for the first time, we present a circuit model of InGaAs-GaAs self-assembled quantum dot (QD) lasers (SAQDLs) based on the standard rate equations. By using the presented model, effects of carrier dynamics on QD laser static and dynamic performances are investigated. Simulated results show that retarded carrier relaxation due to phonon bottleneck degrades the threshold current, external quantum efficiency, and modulation response of QD laser, which is in agreement with the results reported by other researchers. The model accurately explains the operating characteristics found in InGaAs-GaAs SAQDLs.