Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of poisson’s equation

The electrostatic integrity for UTB GeOI MOSFET is examined comprehensively by using analytical solution of Poisson’s equation verified with TCAD simulation. Our results indicate that UTB GeOI MOSFETs with the ratio of channel length (L
g
) to channel thickness (T
ch
) around 5 can show comparable subthreshold swing to that of the SOI counterparts. The impact of buried oxide thickness (T
BOX
) and back-gate bias (V
back-gate
) on the electrostatic integrity of GeOI devices are also examined.