A manufacturable process to improve thermal stability of 0.25-/spl mu/m cobalt silicided poly gate

A CoSi/sub 2/ salicidation process using a thin titanium capping layer is developed to improve the thermal stability of deep submicron CoSi/sub 2//poly stacks. 50 nm CoSi/sub 2/ was uniformly formed on 0.25-/spl mu/m wide poly lines. The electrical results show that the lines formed by a capping process using Ti can withstand higher thermal treatment (750/spl deg/ C for 30 min) without significant degradation. This work shows that the modified CoSi/sub 2/ process should be considered for 0.25-/spl mu/m CMOS applications.<
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