High-Efficiency GaN-HEMT Class-F Amplifier Operating at 5.7 GHz

We report on the design, fabrication, and measurement results of a high-efficiency class-F amplifier using an AlGaN/GaN HEMT at 5.7 GHz. Because of their higher operating voltage, GaN devices are expected to have higher operating efficiency as compared to GaAs devices. The fabricated amplifier using a low-loss resin microstrip substrate validated high efficiency expectations with a maximum drain efficiency of 77.1%, maximum power added efficiency of 68.7%, and output power of up to 34.5 dBm at 5.69 GHz.