Physical Mechanisms of Ion-Induced Stuck Bits in the Hyundai 16M$\,\times\,$ 4 SDRAM

It was previously thought that stuck bits in the Hyundai 16M times 4 SDRAM were caused by micro-dose. It is argued here that the correct mechanism is micro (i.e., from a single particle hit) displacement damage, which creates a leakage current that drains the storage capacitor.