Molecular beam epitaxy growth of A 1.58 μm InGaAs quantum well laser on GaAs

We demonstrate how MBE growth parameters can be optimized to produce a metamorphic InGaAs QW laser emitting in the 1.55 mum range. Different techniques to suppress roughening while maintaining low threading dislocation densities are evaluated. Finally, we demonstrate a 50 times 1250 mum
²
broad area Fabry-Perot laser that produces pulsed lasing with a threshold current density of 490 A/cm
²
and a wavelength of 1.58 mum at room temperature.