Numerical calculation of temperature-dependent absorption in end pumped Yb:YAG thin disk laser

In this paper, the dependence of absorption power on the temperature in an end pumped Yb:YAG quasi-three level thin disk laser is calculated. Here, we have used the temperature-dependent form of Boltzmann occupation factors, absorption cross section and thermal conductivity of the Yb:YAG crystal. A Monte Carlo ray tracing code developed by our group and a 2D finite element analysis (FEA) with the ANSYS package are used to calculate the absorption power and the temperature distribution inside the Yb:YAG thin disk laser respectively. An iterative method used for combination of these two methods to achieve the temperature-dependent absorption power.