Silicon RFCMOS SOI technology with above-IC MEMS integration for front end wireless applications

We describe a 0.18/0.5 um RF CMOS thick Silicon-On-Insulator (SOI) technology built on high resistivity (1 kOhm-cm) substrates. A high performance/high power RF MEMS contact switch can also be integrated in the technology through above-IC post-processing. This RFCMOS/MEMS integrated technology provides a platform for cost-effective monolithic integration of several RF RX/TX functions for next generation wireless system applications. The silicon SOI technology also includes the integration of a solid-state RF switch, and a RF power LDMOS transistor with good linear and saturated RF power characteristics in the frequency range between 0.8 GH - 2.4 GHz. We present measured results of MEMS and FET solid-state RF switches, RF power devices, as well as characterization data integrated power management circuits.