0.13μm SiGe BiCMOS technology for mm-wave applications

This paper presents a complete 0.13 mum SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280GHz f
_T
/f
_MAX
) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission lines and inductors, 2fF/mum
²
high-linearity MIM capacitor and complementary double gate oxide MOS transistors.