Logic gate threshold voltage controllable single metal gate FinFET CMOS inverters implemented by using co-integration of 3T/4T-FinFETs

The logic gate threshold voltage controllable single metal gate FinFET CMOS inveter constructed by the 3T-PMOS and 4T-NMOS have successfully been fabricated. The accurate current matching and the logic gate threshold voltage tuning by V
g2
in the 4T-NMOS have been demonstrated. A higher WF metal would be more suitable for the proposed FinFET CMOS.