Optical sensor using a floating body SOI MOSFET in the delta-sigma loop

In this paper, the partially depleted SOI phototransistor has been used as a light intensity sensor. A pixel implementing the technique elaborated by L. Harik et al was designed and implemented on SOI technology. The circuit implements a first order Delta-sigma modulator. Measured data show flux densities as low as 3mW/m
²
and an SNR of 60 dB.