Effect of random impurities on transport characteristics of nano-scale MOSFET

Recently, we have proposed a new method for device simulations which allows for splitting the device area into a set of independent elements and computing all the physical observables in the form of local spectral representation. The shape of the device elements and their internal coordinate representation are arbitrary which offers a natural way to treat singular dopant charge distribution by choosing appropriate device fragmentation scheme. We have applied our method to study the impact of an attractive ion in intrinsic Si channel to the MOSFET transport characteristics. We have observed an intrinsic bistability in biased MOSFETs related with two possible ion charge screening mechanisms.