Intraband radiative and nonradiative transitions of carriers confined in Si nanocrystals

Rates of spontaneous optical intraband transitions are determined. Huang-Rhys factor controlling the hole relaxation is calculated. The rate of hole relaxation due to the emission of multiple optical phonons is estimated. A new mechanism of electron nonradiative relaxation is proposed. This work was supported by RFBR and the ldquoDynastyrdquo Foundation - ICFPM.