Comments on “High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm”

We have a number of issues with the above paper “High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Current Exceeding 1 A/mm,” by Y. Xuan, Y. Q. Wu, and P. D. Ye, published IEEE Electron Device Letters in April 2008 which we wish to highlight.