Multiscale Atomistic Simulations of High-k MOSFETs

We report on a multiscale simulation approach that includes both macroscopic drift-diffusion current model and atomistic quantum tunneling model. The models are solved together in a self-consistent way inside a single simulation package. We compare the high-K gates based on HfO
₂
and ZrO
₂
with a SiO
₂
gate of the same equivalent thickness and show the effect of the tunneling current on transistor performance.