Technology of SOI monolithic active pixel detectors for improvement of I-V characteristics and reliability

Monolithic active pixel detectors in SOI (Silicon On Insulator) technology are novel sensors of ionizing radiation, which exploit SOI substrates for the integration of readout electronics and a pixel detector. Some important parameters of the devices are breakdown voltage and leakage current. The paper addresses recent developments in the field of the technology of the SOI detectors, which lead to improvement of reliability and current-voltage characteristics of the sensors.