A very high frequency dc-dc converter based on a class Φ2 resonant inverter

This paper introduces a new dc-dc converter suitable for operation at very high frequencies under on-off control. The converter power stage is based on a resonant inverter (the Phi
₂
inverter) providing low switch voltage stress and fast settling time. A new multi-stage resonant gate driver suited for driving large, high-voltage rf MOSFETS at VHF frequencies is also introduced. Experimental results are presented from a prototype dc-dc converter operating at 30 MHz at input voltages up to 200 V and power levels above 200 W. These results demonstrate the high performance achievable with the proposed design.