35-nm gate-length and ultra low-voltage (0.45 V) operation Bulk Thyristor-SRAM/DRAM (BT-RAM) cell with Triple selective Epitaxy Layers (TELs)

We have successfully developed an alternative SRAM cell using a bulk thyristor-RAM (BT-RAM), which has a 35-nm gate-length with triple selective epitaxy layers (TELs) for the anode, the n-base, and the cathode. The TEL BT-RAM reads and writes at an ultra low voltage of 0.45 V at 900 ps and reads and writes at a high speed of 100 ps at 0.9 V. It also has excellent scalability, a high I
_on
/I
_off
ratio, and good thermal stability even at 125degC. The TEL BT-RAM is therefore a promising alternative SRAM cell for the 35-nm gate length generation and beyond.