Analyses of 5σ Vth fluctuation in 65nm-MOSFETs using takeuchi plot

Using 1M DMA-TEG, the analyses of 5s Vth fluctuation in 65nm-MOSFETs were carried out. Physical and electrical analyses confirmed that random dopant fluctuation is dominant though NMOSFET has larger fluctuation as compared with PMOSFET. To explain this phenomenon, a B clustering model is proposed. In the case of clustering with 5 to 6 B atoms in the channel, V
th
fluctuation of NMOSFET can be explained.