An application of C-AFM as a tool for SRAM soft single-column failure analysis in advanced HV technologies

It has been long recognized that SRAM memory is an ideal vehicle for defect monitoring and yield improvement during process development because of its highly structured architecture and simplified approach using memory bitmapping. However, the success rate of defect detection, especially for soft single-column failures, which is one of the most complex failure modes of an SRAM failure, is decreasing when using traditional physical failure analysis (PFA) with only the bitmap available for guidance due to a variety of invisible or undetectable defects that cause a leakage behavior in the device. In order to understand the leakage behavior in advanced high voltage (HV) processes, Conductive Atomic Force Microscope (C-AFM) [1–5] is introduced to perform junction-level fault isolation prior to attempting PFA. In this study, the quantified data extracted using the C-AFM can also be used to establish a connection between the failure mechanism discovered and the soft single column failure mode.