Electron trap levels in PbSnTe:In

In the present paper, the energy spectrum of localized states in PbSnTe:In is reported which was deduced from experimental current-voltage characteristics of PbSnTe:In films measured at T = 4.2 K. The spectrum was found to be quasi-continuous yet exhibiting a non-uniform energy distribution of states in the forbidden gap of PbSnTe:In. Possible nature of the localized states is discussed.