Optical and electrical properties of a-InGaAs:H films prepared by double-target magnetron Co-sputtering

Film growth is carried out in the growth ambient with H
₂
/Ar ratios ranging from 0 to 0.4 at a constant working pressure of 1 Pa by magnetron co-sputtering with the targets of InAs and GaAs. The composition, and structure characterization have been measured by electron diffraction spectrum( EDS) and X-ray diffraction(XRD).The optical properties and electrical properties of amorphous InGaAs:H (alpha-InGaAs:H) films have been studied by spectrophotometer and microampere meter. The optical band gap of alpha-InGaAs:H thin film shifts to higher energies with increasing H
₂
/Ar ratios from 0.1 to 0.4. At the same time, dark conductivity and photo-sensitivity properties are related to H
₂
/Ar ratios. These results indicate that hydrogen has passivation effect on alpha-InGaAs:H thin films significantly.In addition, the temperature characteristic of the sample was investigated.