Crystal Structure and Magnetic Properties of MnAl Alloy Thin Films

In order to obtain a ferromagnetic Mn-Al film with a single τ phase, the sputtering conditions such as the argon gas pressure and target composition, as well as the annealing temperature, were varied systematically. Mn-Al film with a saturation magnetization of 82 emu/g was obtained only by sputtering under a 10 Pa Ar pressure, followed by annealing at about 573K. The intensity of the magnetization was nearly the same as that of bulk samples.