Pulsed-IV and RF waveform measurements of unique high-K dielectric GaN MOSFETs

This paper demonstrates the capabilities of a state of the art RF waveform measurement system to explore the RF performance of new compound semiconductor MOSFET devices. Pulsed IV and time domain waveform measurements are presented for recently developed GaN MOSFET devices with high-K epitaxially grown gate dielectrics. The results demonstrate promising performance for first generation devices, with RF power densities above 1 W/mm. The waveform measurements point the way forward for improving future devices by giving direct visual feedback on where performance is being lost.