Wideband mixed lumped-distributed-element 90° and 180° power splitters on silicon substrate for millimeter-wave applications

This paper presents two millimeter-wave lumped-distributed 90° and 180° power splitters fabricated in the back-end-of-the-line (BEOL) of a 0.18 μm SiGe BiCMOS technology. The 180° and 90° power splitters based on mixed lumped-distributed-element three-port Wilkinson power divider with phase shifters at the outputs are shown to achieve an amplitude balance of better than 0.05 dB and 0.21 dB, respectively, at 77 GHz. The return losses for both power splitters are better than 12 dB from 70 GHz to 80 GHz. The effective areas of the 180° and 90° splitters are 240 x 440 μm
²
and 220 x 400 μm2, respectively.