Response of GaAs displacement damage monitors to protons, electrons, and gamma radiation

The need to characterize the radiation hardness of certain classes of devices in terms of atomic displacement damage rather than total absorbed dose is addressed. Resistive-network displacement damage monitors irradiated with 1.0-MeV protons and 7.3-MeV electrons indicate that these radiations are both about twenty times as damaging as /sup 60/Co gamma radiation for the same total absorbed dose. Preliminary results are presented on an alternative monitor consisting of a GaAs LED (light-emitting diode) that offers a two-order-of-magnitude increase in sensitivity over the resistive network monitors. Other characteristics of the two monitors, such as range, linearity, annealing and reuse, and neutron sensitivity, are compared.<
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