Bending effect of Si MOSFETs on flexible plastic substrate

By applying ~0.27% tensile strain to the flexible die of a 0.16 mum thin-body (100 mum) Si MOSFET mounted on plastic, the DC characteristics have been improved. The small DC performance degradation of the Si MOSFET transferred to plastic shows the potential of integrating electronics onto plastic. The device performance was improved by flexing the substrate to create stress, which produced a 10.7% enhancement of the saturation drain current and only 0.003 V V
_th
is lower. The approach has the advantages of flexible electronics on the insulating plastic substrate and low cost.