Current and Capacitance Modeling of Short-Channel DG MOSFETs

We present a precise two-dimensional current and capacitance modeling for nanoscale double-gate MOSFETs covering a wide range of operating regions, geometries and material combinations. The modeling in the sub-threshold regime is based on conformal mapping techniques. In moderate to strong inversion, we obtain self-consistent results based on the 2D Poisson's equation. The results are in excellent agreement with numerical simulations.