60μW SMR BAW oscillator designed in 65nm CMOS technology

This paper presents the simulation results of a BAW-based low power oscillator. The oscillator was designed using high-Q Solidly Mounted Bulk Acoustic Wave Resonators (SMR BAW) exhibiting quality factor around 2200. The oscillator is simulated using RF Transistors of the CMOS 65nm process from STMicroelectronics. The oscillator was optimized for low power purpose and consumes 50μA from a 1.2 V source with phase noise performance of −124 dBc/Hz at 100 KHz offset. The impact of the bias current on phase noise, output voltage and oscillation frequency was also studied.