Design of Broadband Inductorless LNAs in Ultra-Scaled CMOS Technologies

Shunt-shunt resistive feedback is used in this paper to design inductorless broadband LNAs in a digital 45nm CMOS technology. Simulation results show 18 dB gain over a 10 GHz bandwidth, with NF ≪ 3 dB and IIP3 ≫ −7 dBm in-band, while consuming 32 mW from a 1 V supply voltage.