A charge-pump based 0.35-um CMOS RF switch driver for multi-standard operations

A novel RF switch driver for high-power wireless applications is presented. The switch driver employs a novel structure of a charge pump to generate up-converted voltage to ensure linearity of an antenna switch made of GaAs p-HEMT technology. The novel charge pump can generate up-converted voltage that is higher than that of conventional charge pumps by using a parallel structure and PMOS body bias technique. The proposed switch driver was fabricated using a 0.35-um standard CMOS technology. The up-converted voltage reaches up to 8.6V with 3V-supply voltage and less than 30mV of ripple. The size of the chip is less than 0.12mm
²
.