Towards compact modelling of Schottky barrier CNTFET

Recently, Carbon nanotube field-effect transistors (CNTFETs) have been studied as an interesting alternative to CMOS transistors. CNTFETs can be fabricated with Ohmic or Schottky type contacts. In this paper, we present a compact model for the tunnel current trough a Schottky barrier based on the Wentzel-Kramers-Brillouin, "WKB" approximation of the transmission coefficient [1]. The results obtained with this model are compared with the measured I-V characteristics of a CNT Schottky diode device [2] and show good agreement.