Extendibility of NiPt silicide to the 22-nm node CMOS technology

This paper shows ultra-low contact resistivities with standard NiPt silicide process that can reach 1times10
^-8
Omega-cm
²
for both n
⁺
and p
⁺
Si by using novel test structures of small silicided contact with varied areas from 20-nm diameter to 260-nm diameter by e-beam lithography fabricated on highly doped substrate made by conventional source drain implantation. It demonstrates that NiPt silicide can fulfill CMOS technology requirements down to the ITRS 22nm node.