High doped drain double-Resurf 100V P-channel MOS on SOI 0.35 μm BCD technology

In this paper two different 100 V P-channel MOS structures on SOI 0.35 mum BCD technology have been compared. The higher drain doping for the drain extension PMOS with respect to the PDMOS is key to achieve not only good specific on-resistance but also robustness at high temperature reverse bias (HTRB) reliability test.