The effect of the temperature on the Bipolar Degradation of 3.3 kV 4H-SiC PiN diodes

Abstract- 4H-SiC PiN diodes have been manufactured on a Norstel epitaxied P+ZN/N* substrate with a combination of Mesa and JTE as edge termination. A breakdown voltage of 3.3 kV has been measured at lmuA regardless the active area (0.16 and 2.56 mm
²
). A differential on-resistance of 1.7 mOmega.cm
²
was extracted at 15A-25degC. The recovery charge was only of 300 nC for a switched current of 15A at 300degC at a blocking voltage of 500V. 50% of the diodes exhibit a voltage shift of about IV, after a 60 hours DC- stress (25degC-225degC). The leakage current level remains unaffected after the DC stress.