Landscape of Combinatorial Materials Exploration and High Throughput Characterizations for the Post-CMOS Devices

A combinatorial synthesis and high throughput characterization was employed to accelerate the new materials exploration. Also tow basic guide lines were shown to design the future nano CMOS. They are amorphous structure and defect control. As examples, we examined a HfO
₂
-Y
₂
O
₃
-Al
₂
O
₃
ternary oxide for gate oxide and Pt-W, Ru-Mo amorphous metals for metal gate. Moreover, C-incorporation is effective to obtain metal electrodes with a smaller grain size, which would be required for ultimate short-channel MIS-FET devices in 32-22 nm node and beyond to suppress variability of electric properties as well.