A Carbon Co-implantation Technique for Formation of Steep Halo for nFET Short Channel Effect improvement and Performance Boost

For the first time, short channel effects (SCE) of the nFET has been improved while achieving a performance boost of 7% (additive to the process induced stress technique). This was achieved by realizing a steep halo profile via strategically positioned carbon regions at the source and drain extension (SDE) regions. The tailored halo profiles also decreased the overlap (C
ov
) and junction capacitance (C
j
). In effect, a resultant 6.5% decrease in ring oscillator (RO) delay was obtained. The carbon co-implanted device has indicated no compromise in the reliability and noise performance.